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Freescale Semiconductor Technical Data
MRF5S21090H Rev. 1, 12/2004
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 850 mA, Pout = 19 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 14.5 dB Drain Efficiency -- 26% IM3 @ 10 MHz Offset -- - 37.5 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset -- - 40.5 dBc @ 3.84 MHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW Output Power * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched, Controlled Q, for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * Lower Thermal Resistance Package * Low Gold Plating Thickness on Leads, 40 Nominal. * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF5S21090HR3 MRF5S21090HSR3
2170 MHz, 19 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465 - 06, STYLE 1 NI - 780 MRF5S21090HR3
CASE 465A - 06, STYLE 1 NI - 780S MRF5S21090HSR3
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value - 0.5, +65 - 0.5, +15 269 1.5 - 65 to +150 200 Unit Vdc Vdc W W/C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 90 W CW Case Temperature 76C, 19 W CW Symbol RJC 0.65 0.69 Value (1,2) Unit C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2004. All rights reserved.
MRF5S21090HR3 MRF5S21090HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Conditions Human Body Model Machine Model Charge Device Model Class 1 (Minimum) M3 (Minimum) C7 (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics
(1)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics (DC) Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 850 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
IDSS IDSS IGSS
-- -- --
-- -- --
10 1 1
Adc Adc Adc
VGS(th) VGS(Q) VDS(on) gfs
2.5 -- -- --
2.9 3.9 0.25 5
3.5 -- -- --
Vdc Vdc Vdc S
Crss
--
1.7
--
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 850 mA, Pout = 19 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ 10 MHz Offset.. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. Gps D IM3 ACPR IRL 12.5 24 -- -- -- 14.5 26 - 37.5 - 40.5 - 15 -- -- - 35 - 38 -9 dB % dBc dBc dB
MRF5S21090HR3 MRF5S21090HSR3 2 RF Device Data Freescale Semiconductor
C3 R1 VBIAS R2 C4 C5 C9 C6 Z4 Z1 Z2 C14 C1 Z5 Z3 Z6 Z7 Z8 DUT Z9 Z10 Z11 Z12 Z13 Z15 C2 Z14 Z16 Z17 Z18 Z19 Z20 Z21 C10 C7 C8 W1 C11 C12 + C13 R3 R4 VSUPPLY
RF INPUT
RF OUTPUT
C15
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11
1.0856 x 0.080 Microstrip 0.130 x 0.080 Microstrip 0.230 x 0.080 Microstrip 0.347 x 0.208 Microstrip 0.090 x 0.208 Microstrip 0.650 x 0.176 Taper 0.623 x 0.610 Microstrip 0.044 x 0.881 Microstrip 0.044 x 0.869 Microstrip 1.076 x 0.446 Microstrip 0.320 x 0.393 Microstrip
Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19 Z20 Z21 PCB
0.609 x 0.220 Microstrip 0.290 x 0.106 Microstrip 0.290 x 0.106 Microstrip 0.080 x 0.025 Microstrip 1.080 x 0.160 Microstrip 0.180 x 0.080 Microstrip 0.260 x 0.147 Microstrip 0.500 x 0.080 Microstrip 0.199 x 0.147 Microstrip 0.365 x 0.080 Microstrip Arlon GX0300 - 55- 22, 0.03, r = 2.55
Figure 1. MRF5S21090HR3(HSR3) Test Circuit Schematic
Table 5. MRF5S21090HR3(HSR3) Test Circuit Component Designations and Values
Part C1 C2 C3 C4, C12 C5 C6 C7 C8 C9, C10 C11 C13 C14, C15 R1 R2 R3, R4 W1 Description 9.1 pF Chip Capacitor 8.2 pF Chip Capacitor 2.0 pF Chip Capacitor 0.1 F Chip Capacitors 5.6 pF Chip Capacitor 5.1 pF Chip Capacitor 7.5 pF Chip Capacitor 1.2 pF Chip Capacitor 0.56 F Chip Capacitors 1000 pF Chip Capacitor 470 F, 35 V Electrolytic Capacitor 0.4 - 2.5 Variable Capacitors, Gigatrim 1 kW Chip Resistor 560 kW Chip Resistor 12 W Chip Resistors Wire Strap Part Number 100B9R1CP 500X 100B8R2CP 500X 100B2R0BP 500X CDR33BX104AKWS 100B5R6CP 500X 100B5R1CP 500X 100B7R5JP 500X 100B1R2BP 500X 700A561MP 150X 100B102JP 500X 95F4579 44F3367 D5534M07B1K00R CR1206 564JT RM73B2B120JT Manufacturer ATC ATC ATC Kemet ATC ATC ATC ATC ATC ATC Newark Newark Newark Newark Garrett Electronics
MRF5S21090HR3 MRF5S21090HSR3 RF Device Data Freescale Semiconductor 3
C3 C5 VGG R2 R1 R3 C4 C9 C10
C7 C8
C13
C11 C6 C12
R4 W1
VDD
C1 C2 C14 CUT OUT AREA C15
MRF5S21090 Rev 5
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. MRF5S21090HR3(HSR3) Test Circuit Component Layout
MRF5S21090HR3 MRF5S21090HSR3 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
15 14 13 G ps , POWER GAIN (dB) 12 11 10 9 8 7 6 IM3 ACPR 2100 2120 2140 2160 2180 IRL 3.84 MHz Channel Bandwidth, Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF) Gps D VDD = 28 Vdc, Pout = 19 W (Avg.), IDQ = 850 mA 2-Carrier W-CDMA, 10 MHz Carrier Spacing 40 35 30 25 20 -20 -25 -30 -35 -40 -45 2200 D, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) -10 -15 -20 -25 -30 -35
5 2080
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance
17 IDQ = 1200 mA 1000 mA 15 850 mA VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurement, 10 MHz Tone Spacing IMD,THIRD ORDER INTERMODULATION DISTORTION (dBc)
-15 -20 -25 -30 -35 -40 -45 -50 1 10 Pout, OUTPUT POWER (WATTS) PEP 100
16 G ps , POWER GAIN (dB)
VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurement, 10 MHz Tone Spacing
IDQ = 450 mA 1200 mA
14
650 mA
13
IRL, INPUT RETURN LOSS (dB)
450 mA
1000 mA 650 mA 1 10 Pout, OUTPUT POWER (WATTS) PEP 850 mA 100
12
Figure 4. Two - Tone Power Gain versus Output Power
Figure 5. 3rd Order Intermodulation Distortion versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
-20 -25 -30 -35 -40 -45 7th Order -50 -55 -60 0.1 VDD = 28 Vdc, Pout = 90 W (PEP), IDQ = 850 mA Two-Tone Measurements, Center Frequency = 2140 MHz 1 TWO-TONE SPACING (MHz) 10 5th Order 3rd Order Pout , OUTPUT POWER (dBm)
57 55 53 51 P1dB = 50.47 dBm (111.4 W) Actual 49 47 45 30 32 34 36 38 40 42 Pin, INPUT POWER (dBm) VDD = 28 Vdc, IDQ = 850 mA Pulsed CW, 8 sec(on), 1 msec(off) Center Frequency = 2140 MHz Ideal P3dB = 51.17 dBm (130.9 W)
Figure 6. Intermodulation Distortion Products versus Tone Spacing
Figure 7. Pulse CW Output Power versus Input Power
MRF5S21090HR3 MRF5S21090HSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
40 35 30 25 20 15 10 5 0 1 10 Pout, POWER (WATTS) W-CDMA Gps IM3 ACPR VDD = 28 Vdc, IDQ = 850 mA, f1 = 2135 MHz, f2 = 2145 MHz, 2 x W-CDMA, 10 MHz @ 3.84 MHz Bandwidth, Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF) D
-15 MTTF FACTOR (HOURS x AMPS2) -20 IM3 (dBc), ACPR (dBc) -25 -30 -35 -40 -45 -50 -55
109
108
107
106 100
120
140
160
180
200
220
TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 8. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power
Figure 9. MTTF Factor versus Junction Temperature
W - CDMA TEST SIGNAL
100 10 1 (dB) 0.1 0.01 0.001 .0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -120 -25 -ACPR @ +ACPR @ 3.84 MHz BW 3.84 MHz BW -IM3 @ 3.84 MHz BW -20 -15 -10 -5 0 5 10 3.84 MHz Channel BW
+IM3 @ 3.84 MHz BW 15 20 25
f, FREQUENCY (MHz)
Figure 10. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single Carrier Test Signal
Figure 11. 2-Carrier W-CDMA Spectrum
MRF5S21090HR3 MRF5S21090HSR3 6 RF Device Data Freescale Semiconductor
f = 2200 MHz Zload
f = 2100 MHz Zo = 10
f = 2200 MHz f = 2100 MHz Zsource
VDD = 28 Vdc, IDQ = 850 mA, Pout = 19 W Avg. f MHz 2100 2120 2160 2200 Zsource 3.4 - j5.1 3.2 - j5.4 3.0 - j4.4 3.0 - j4.0 Zload 2.4 - j2.0 2.2 - j2.1 2.1 - j1.9 1.8 - j1.6
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 12. Series Equivalent Source and Load Impedance MRF5S21090HR3 MRF5S21090HSR3 RF Device Data Freescale Semiconductor 7
NOTES
MRF5S21090HR3 MRF5S21090HSR3 8 RF Device Data Freescale Semiconductor
NOTES
MRF5S21090HR3 MRF5S21090HSR3 RF Device Data Freescale Semiconductor 9
NOTES
MRF5S21090HR3 MRF5S21090HSR3 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
B G
1 2X
Q bbb
M
TA
M
B
M
3
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF
B
(FLANGE)
2
K
D bbb
M
TA
M
B
M
M
(INSULATOR)
R
M
(LID)
bbb N H C
(LID)
M
TA
B
M
ccc
M
TA
M
B
M
S
M
(INSULATOR)
ccc
TA
M
B
M
aaa
M
TA
M
B
M
F E A A
(FLANGE)
T
SEATING PLANE
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 465 - 06 ISSUE F NI - 780 MRF5S21090HR3
4X U (FLANGE)
B
1
4X Z (LID)
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF
B
(FLANGE)
2
2X
K
D bbb
M
TA
M
B
M
N
(LID)
R
M
(LID)
ccc M H
3
TA
M
B
M
ccc aaa
M
TA TA
M
B B
M
(INSULATOR)
S
M
(INSULATOR) M
bbb C
M
TA
B
M
M
M
F E A A
(FLANGE)
STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE
T
SEATING PLANE
CASE 465A - 06 ISSUE F NI - 780S MRF5S21090HSR3
MRF5S21090HR3 MRF5S21090HSR3 RF Device Data Freescale Semiconductor 11
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MRF5S21090HR3 MRF5S21090HSR3
Document Number: MRF5S21090H Rev. 1, 12/2004
12
RF Device Data Freescale Semiconductor

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